The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Jun. 13, 2001
Hisashi Nomura, Tokyo, JP;
Yushin Takasawa, Tokyo, JP;
Hajime Karasawa, Tokyo, JP;
Yoshinori Imai, Tokyo, JP;
Tadanori Yoshida, Sayama, JP;
Kenichi Yamaguchi, Tokyo, JP;
Other;
Abstract
It is an object of the present invention to make it easy to diffuse phosphorus into a silicon film and allow the phosphorus diffusion concentration to be easily controlled by varying the timing at which the dopant gas is allowed to flow. A silicon wafer on whose surface an amorphous silicon film has been formed is placed in a diffusion furnace. After this, phosphine (PH ) or a mixed gas containing phosphine is allowed to begin flowing over the wafer and the phosphorus is diffused into the silicon film before the amorphous silicon film crystallizes and changes into a polysilicon film.