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For the Inventor, By the Inventor

Falmouth, ME, United States of America

Sunglyong Kim

This inventor holds 7 USPTO granted patents. Top assignee: Fairchild Semiconductor Corporation. Active years: 2013-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sunglyong Kim. Retrieved from https://idiyas.com/inventor/sunglyong-kim-bird16hp

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7

% Patents Active = 100.0

Average Co-Inventor Count = 3.1

ph-index = 2

Forward Citations = 18(Granted Patents)


Company Filing History:

goldMedal7 out of 1,302 
 
Fairchild Semiconductor Corporation
 patents

Years Active: 2013-2016

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7 patents (USPTO):Explore Patents
1. 9263438 - Apparatus related to a diode device including a JFET portion (2016-02-16),
2. 9117845 - Production of laterally diffused oxide semiconductor (LDMOS) device and a bipolar junction transistor (BJT) device using a semiconductor process (2015-08-25),
3. 8987107 - Production of high-performance passive devices using existing operations of a semiconductor process (2015-03-24),
4. 8878275 - LDMOS device with double-sloped field plate (2014-11-04),
5. 8822296 - Use of plate oxide layers to increase bulk oxide thickness in semiconductor devices (2014-09-02),
6. 8736013 - Schottky diode with opposite-polarity schottky diode field guard ring (2014-05-27),
7. 8618627 - Shielded level shift transistor (2013-12-31),

Title: The Innovations of Sunglyong Kim

Introduction

Sunglyong Kim is a notable inventor based in Falmouth, ME (US). He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on advanced electronic devices, particularly those involving junction field-effect transistors and bipolar junction transistors.

Latest Patents

One of his latest patents is an apparatus related to a diode device that includes a JFET portion. This apparatus features an anode terminal and a cathode terminal, with a junction field-effect transistor (JFET) portion that has a channel within a semiconductor substrate. This channel defines a first portion of the electrical path between the anode and cathode terminals. Additionally, the apparatus includes a diode portion formed within the semiconductor substrate, which defines a second portion of the electrical path and is serially coupled to the JFET channel.

Another significant patent involves the production of laterally diffused oxide semiconductor (LDMOS) devices and bipolar junction transistor (BJT) devices using a semiconductor process. This method includes implanting a first dopant simultaneously in portions of both the LDMOS device and a resistor device. Furthermore, a second dopant is implanted simultaneously in portions of the LDMOS device and the BJT device.

Career Highlights

Sunglyong Kim is currently employed at Fairchild Semiconductor Corporation, where he continues to innovate in the semiconductor industry. His expertise and contributions have positioned him as a key figure in the development of advanced electronic components.

Collaborations

Throughout his career, Kim has collaborated with notable colleagues, including Christopher Nassar and Steven M Leibiger. These collaborations have further enhanced his work and contributions to the field.

Conclusion

Sunglyong Kim's innovative work in semiconductor technology has led to several important patents that advance the capabilities of electronic devices. His contributions continue to impact the industry positively, showcasing his dedication to innovation and excellence.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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