The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jan. 25, 2013
Applicant:
Fairchild Semiconductor Corporation, San Jose, CA (US);
Inventors:
Christopher Nassar, Portland, ME (US);
Sunglyong Kim, Falmouth, ME (US);
Steven Leibiger, Falmouth, ME (US);
James Hall, Scarborough, ME (US);
Assignee:
Fairchild Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/336 (2006.01); H01L 21/02 (2006.01); H01L 29/73 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 29/732 (2006.01); H01L 49/02 (2006.01); H01L 21/8249 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 21/02595 (2013.01); H01L 21/0415 (2013.01); H01L 21/8249 (2013.01); H01L 27/0623 (2013.01); H01L 27/0629 (2013.01); H01L 27/0635 (2013.01); H01L 28/20 (2013.01); H01L 29/0634 (2013.01); H01L 29/66272 (2013.01); H01L 29/7322 (2013.01); H01L 29/7816 (2013.01); H01L 29/7817 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01);
Abstract
In one general aspect, a method can include implanting a first dopant, simultaneously, in a portion of a laterally diffused metal oxide semiconductor (LDMOS) device and in a portion of a resistor device included in a semiconductor device. The method can also include implanting a second dopant, simultaneously, in a portion of the LDMOS device and in a portion of a bipolar junction transistor (BJT) device in the semiconductor device.