The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Feb. 18, 2013
Fairchild Semiconductor Corporation, San Jose, CA (US);
Sunglyong Kim, Falmouth, ME (US);
Mark Schmidt, Falmouth, ME (US);
Christopher Nassar, Portland, ME (US);
Steven Leibiger, Falmouth, ME (US);
Fairchild Semiconductor Corporation, San Jose, CA (US);
Abstract
In one general aspect, an apparatus can include a channel region disposed in a semiconductor substrate, a gate dielectric disposed on the channel region and a drift region disposed in the semiconductor substrate adjacent to the channel region. The apparatus can further include a field plate having an end portion disposed between a top surface of the semiconductor substrate and the gate dielectric The end portion can include a surface in contact with the gate dielectric, the surface having a first portion aligned along a first plane non-parallel to a second plane along which a second portion of the surface is aligned, the first plane being non-parallel to the top surface of the semiconductor substrate and the second plane being non-parallel to the top surface of the semiconductor substrate.