The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Jun. 24, 2010
Sunglyong Kim, Falmouth, ME (US);
Jongjib Kim, Falmouth, ME (US);
Sunglyong Kim, Falmouth, ME (US);
Jongjib Kim, Falmouth, ME (US);
Fairchild Semiconductor Corporation, San Jose, CA (US);
Abstract
A semiconductor device can include a transistor and an isolation region. The transistor is formed in a semiconductor substrate having a first conductivity type. The transistor includes a drift region extending from a drain region toward a source region and having a second conductivity type. The drift region includes a first resurf region near a working top surface and having the first conductivity type. The high voltage isolation island region includes a first well region laterally offset from the drift region. The first well region has the second conductivity type. An isolation region is located laterally between the drain region and the first well region. The isolation region comprises a portion of the semiconductor substrate extending to the top working surface.