Sukwon Hong

Title: Sukwon Hong: Innovator in FinFET Technology

Introduction

Sukwon Hong is a prominent inventor based in Watervliet, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of fin field effect transistors (finFETs). With a total of 13 patents to his name, his work has had a substantial impact on the industry.

Latest Patents

Sukwon Hong's latest patents include innovative methods and systems for local isolation formation for finFET devices. One of his notable inventions involves a method that reduces oxidization and fin critical dimension loss during the formation of finFETs. This process includes the formation of a hard mask layer on top of the fins, followed by a series of deposition and etch processes to achieve the desired structure. Another significant patent focuses on fabricating integrated circuits using flowable chemical vapor deposition techniques combined with low-temperature thermal annealing. This method allows for the creation of a silicon oxide dielectric layer in isolation trenches, enhancing the performance of integrated circuits.

Career Highlights

Throughout his career, Sukwon Hong has worked with leading companies in the semiconductor industry, including GlobalFoundries Inc. and Applied Materials, Inc. His expertise in finFET technology has positioned him as a key player in advancing semiconductor manufacturing processes.

Collaborations

Sukwon has collaborated with talented individuals in the field, including Min Gyu Sung and Jingmei Liang. These partnerships have contributed to the successful development of his innovative technologies.

Conclusion

Sukwon Hong's contributions to finFET technology and integrated circuit fabrication demonstrate his commitment to innovation in the semiconductor industry. His patents reflect a deep understanding of the challenges in this field and offer solutions that enhance device performance.