The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Jun. 22, 2017
Globalfoundries Inc., Grand Cayman, KY (US);
Min Gyu Sung, Latham, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Hoon Kim, Clifton Park, NY (US);
Chanro Park, Clifton Park, NY (US);
Sukwon Hong, Watervliet, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
At least one method, apparatus and system are disclosed for forming a fin field effect transistor (finFET) while reducing oxidization and fin critical dimension loss. A plurality of fins of a transistor are formed. A hard mask layer is formed on top of the fins. A first liner layer is formed over the fins and the hard mask layer. A partial deposition process is performed for depositing a first insulation material in a first portion of a channel between the fins. A second liner layer is formed above the fins, the first insulation material, and the channel. A second insulation material is deposited above the second liner layer. A fin reveal process is performed for removing the second insulation material to a predetermined height. An etch process is performed for removing the hard mask layer and the first and second liner layers above the predetermined height.