Stéphane Piotrowicz

Title: Stéphane Piotrowicz: Innovator in Semiconductor Technology

Introduction

Stéphane Piotrowicz is a notable inventor based in Magny les Hameaux, France. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on advanced transistor designs that enhance performance and efficiency in electronic devices.

Latest Patents

One of his latest patents is the HEMT transistor with gate extension. This high-mobility field-effect transistor features a unique stack along the Z axis, deposited on a substrate. It includes a buffer layer, a barrier layer, and a heterojunction that facilitates a two-dimensional electron gas localized in an XY plane. The design incorporates a source, a drain, and a gate, along with a first dielectric layer that meets specific thickness and permittivity criteria. Another significant patent is the insulated power switching cell. This innovative power switching cell includes an input port for receiving a switching control signal and features a self-biasing circuit. The design optimizes the performance of power transistors, enhancing the efficiency of multi-level converters.

Career Highlights

Throughout his career, Stéphane has worked with prominent companies such as Thales and the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. His experience in these organizations has allowed him to develop cutting-edge technologies and contribute to advancements in the semiconductor industry.

Collaborations

Stéphane has collaborated with talented professionals in his field, including Olivier Jardel and Sylvain Delage. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Stéphane Piotrowicz is a distinguished inventor whose work in semiconductor technology has led to several impactful patents. His contributions continue to influence the industry and pave the way for future innovations.