The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Feb. 27, 2018
Thales, Courbevoie, FR;
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Universite DE Limoges, Limoges, FR;
Olivier Jardel, Palaiseau, FR;
Raymond Quere, Saint Pantaleon de Larche, FR;
Stéphane Piotrowicz, Magny les Hameaux, FR;
Philippe Bouysse, Vicq-sur-Breuilh, FR;
Sylvain Delage, Orsay, FR;
Audrey Martin, Rilhac-Rancon, FR;
THALES, Courbevoie, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
UNIVERSITE DE LIMOGES, Limoges, FR;
Abstract
A power switching cell, and associated multi-level converter, include an input port capable of receiving a switching control signal, an input transistor linked by the gate to the input port, and by the source to a reference voltage, a self-biasing circuit comprising a self-biasing transistor linked by the gate to the drain of the input transistor, and a resistor connected in parallel between the gate and the source of the self-biasing transistor, and in series between the drain of the input transistor and the source of the self-biasing transistor, a power transistor, linked by the gate to the source of the self-biasing transistor and by the drain to a power supply voltage, and an isolating transistor linked by the gate and by the source to the gate and to the source of the power transistor, and by the drain to the output port of the cell.