The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Dec. 18, 2020
Thales, Courbevoie, FR;
Jean-Claude Jacquet, Palaiseau, FR;
Philippe Altuntas, Palaiseau, FR;
Sylvain Delage, Palaiseau, FR;
Stéphane Piotrowicz, Palaiseau, FR;
THALES, Courbevoie, FR;
Abstract
A high-mobility field-effect transistor, includes a stack along a Z axis, deposited on a substrate and comprising a buffer layer, a barrier layer, a heterojunction between the buffer layer and the barrier layer, and a two-dimensional electron gas localized in an XY plane perpendicular to the axis Z and in the vicinity of the heterojunction, a source, a drain, and a gate deposited on an upper face of the barrier layer, between the source and the drain, a first dielectric layer having a relative permittivity εand a thickness e which are such that: 0.5 nm≤e/ε≤2 nm, a metal pad arranged between the gate and the drain and deposited on the first dielectric layer, the metal pad being electrically connected to the gate.