Company Filing History:
Years Active: 2025
Title: Philippe Altuntas: Innovator in HEMT Transistor Technology
Introduction
Philippe Altuntas is a notable inventor based in Palaiseau, France. He has made significant contributions to the field of semiconductor technology, particularly through his work on high-mobility field-effect transistors.
Latest Patents
Philippe Altuntas holds a patent for a HEMT transistor with gate extension. This innovative design includes a stack along a Z axis, deposited on a substrate, and comprises a buffer layer, a barrier layer, and a heterojunction between the buffer layer and the barrier layer. The invention features a two-dimensional electron gas localized in an XY plane perpendicular to the Z axis and in the vicinity of the heterojunction. Additionally, it includes a source, a drain, and a gate deposited on the upper face of the barrier layer, with a first dielectric layer having specific relative permittivity and thickness parameters. A metal pad is arranged between the gate and the drain, which is electrically connected to the gate.
Career Highlights
Philippe Altuntas is currently employed at Thales, a leading company in advanced technology solutions. His work at Thales has allowed him to focus on cutting-edge innovations in the field of electronics and semiconductor devices.
Collaborations
Throughout his career, Philippe has collaborated with esteemed colleagues such as Jean-Claude Jacquet and Sylvain Delage. These partnerships have contributed to the advancement of technology in their respective fields.
Conclusion
Philippe Altuntas is a distinguished inventor whose work on HEMT transistors has the potential to influence future developments in semiconductor technology. His contributions at Thales and collaborations with other experts highlight his commitment to innovation and excellence in engineering.