Thales

Philippe Altuntas

Sylvain Delage

Jean-Claude Jacquet

Stéphane Piotrowicz

A high-mobility field-effect transistor, includes a stack along a Z axis, deposited on a substrate and comprising a buffer layer, a barrier layer, a heterojunction between the buffer layer and the barrier layer, and a two-dimensional electron gas localized in an XY plane perpendicular to the axis Z and in the vicinity of the heterojunction, a source, a drain, and a gate deposited on an upper face of the barrier layer, between the source and the drain, a first dielectric layer having a relative permittivity εand a thickness e which are such that: 0.5 nm≤e/ε≤2 nm, a metal pad arranged between the gate and the drain and deposited on the first dielectric layer, the metal pad being electrically connected to the gate.

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Palaiseau, France

Philippe Altuntas