The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Apr. 03, 2015
Thales, Courbevoie, FR;
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Jean-Claude Jacquet, Orsay, FR;
Raphaël Aubry, Gometz le Chatel, FR;
Piero Gamarra, Palaiseau, FR;
Olivier Jardel, Palaiseau, FR;
Stéphane Piotrowicz, Magny les Hameaux, FR;
THALES, Courbevoie, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
Abstract
A stack along a z-axis for a high-electron-mobility field-effect transistor, comprises: a buffer layer comprising a first semiconductor material comprising a binary, ternary or quaternary nitride compound having a first bandgap, a barrier layer comprising a second semiconductor material comprising a binary, ternary or quaternary nitride compound and having a second bandgap, the second bandgap wider than the first bandgap, a heterojunction between the buffer and barrier layers and, a two-dimensional electron gas located in an XY plane perpendicular to the z-axis and in the vicinity of the heterojunction wherein: the buffer layer comprises a zone comprising fixed negative charges of density per unit volume higher than or equal to 10cm, the zone having a thickness smaller than or equal to 200 nm, the product of multiplication of the density per unit volume of fixed negative charges by the thickness of the zone between 10cmand 3.10cm.