The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Apr. 17, 2015
Thales, Courbevoie, FR;
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Universite DE Limoges, Limoges, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Olivier Jardel, Palaiseau, FR;
Raymond Quere, Saint Pantaleon de Larche, FR;
Stéphane Piotrowicz, Magny les Hameaux, FR;
Philippe Bouysse, Vicq-sur-Breuilh, FR;
Sylvain Delage, Orsay, FR;
Audrey Martin, Rilhac-Rancon, FR;
THALES, Courbevoie, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
UNIVERSITE DE LIMOGES, Limoges, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
Abstract
A power switching cell with normally on field-effect transistors comprises a current switch receiving the control input signal over an activation input and a power transistor for switching a high voltage Vapplied to its drain, to its source that is connected to the output port of the cell. The control of the gate of the power transistor whose source is floating, according to the input signal, is provided by a self-biasing circuit connected between its gate and source. The current switch is connected between the self-biasing circuit and a zero or negative reference voltage. The self-biasing circuit comprises a transistor whose source or drain is connected to the gate or source of the power transistor. The gate of this transistor is biased by a resistor connected between its gate and source, and between the current switch and the source. The transistors are HEMT transistors using GaN or AsGa technology.