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For the Inventor, By the Inventor

San Giovanni la Punta, Italy

Simone Rascuna'

This inventor holds 13 USPTO granted patents and 13 published patent applications and 12 EPO patents, primarily in Silicon Carbide Devices. Top assignees: Stmicroelectronics S.r.l., Stmicroelectronics(tours) Sas. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Simone Rascuna'. Retrieved from https://idiyas.com/inventor/simone-rascuna-

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 13 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.5

ph-index = 1


Location History:

  • San Giovanni la Punta, IT (2020 - 2021)
  • Catania, IT (2023 - 2024)

Company Filing History:

goldMedal13 out of 5,700 
 
Stmicroelectronics S.r.l.
 patents
silverMedal1 out of 245 
 
Stmicroelectronics(tours) Sas
 patents
where one patent can have more than one assignee

Years Active: 2020-2026

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Areas of Expertise:
Silicon Carbide
Electronic Device
Manufacturing Method
Power Device
JBS Diode
MPS Diode
Wide Bandgap
Semiconductor
Thermal Budget
Overvoltage Protection
Edge Structure
Robustness
13 patents (USPTO):Explore Patents
1. 12713675 - METHOD OF MANUFACTURING OHMIC CONTACTS OF AN ELECTRONIC DEVICE, WITH THERMAL BUDGET OPTIMIZATION (2026-08-18),
2. 12652812 - Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device (2026-06-09),
3. 12593485 - Forming an electronic device, such as a JBS or MPS diode, based on 3C—SiC, and 3C—SiC electronic device (2026-03-31),
4. 12334346 - Method for manufacturing a SiC electronic device with reduced handling steps, and sic electronic device (2025-06-17),
5. 12308235 - Manufacturing method of a semiconductor device with efficient edge structure (2025-05-20),
6. 12266530 - Manufacturing method of an element of an electronic device having improved reliability, and related element, electronic device and electronic apparatus (2025-04-01),
7. 12125762 - Silicon carbide power device with improved robustness and corresponding manufacturing process (2024-10-22),
8. 11935884 - Overvoltage protection device (2024-03-19),
9. 11854809 - Manufacturing method of a semiconductor device with efficient edge structure (2023-12-26),
10. 11784049 - Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic device (2023-10-10),
11. 11545362 - Manufacturing method of a semiconductor device with efficient edge structure (2023-01-03),
12. 11177394 - Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereof (2021-11-16),
13. 10651319 - Wide bandgap semiconductor switching device with wide area Schottky junction, and manufacturing process thereof (2020-05-12),

Title: Inventor Simone Rascuna

Introduction: Simone Rascuna is a talented inventor hailing from San Giovanni la Punta, Italy. She is known for her innovative contributions to various fields.

Latest Patents: Simone Rascuna holds several patents in the areas of sustainable energy solutions, medical devices, and consumer electronics.

Career Highlights: Throughout her career, Simone Rascuna has been recognized for her groundbreaking inventions that have significantly impacted the industries she works in. Her dedication to pushing the boundaries of technology is evident in the quality of her patents.

Collaborations: Simone Rascuna has collaborated with leading research institutions and companies to bring her inventions to life. Her ability to work with diverse teams has led to successful partnerships and the development of cutting-edge products.

Conclusion: Simone Rascuna's passion for innovation and her commitment to creating impactful solutions make her a standout inventor in the field. Her continued dedication to pushing the boundaries of what is possible ensures that her work will continue to inspire future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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