The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Mar. 03, 2021
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Simone Rascuna', Catania, IT;
Paolo Badala', Acireale, IT;
Anna Bassi, Gravinadi Catania, IT;
Mario Giuseppe Saggio, Aci Bonaccorsi, IT;
Giovanni Franco, Viagrande, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.