San Giovanni la Punta, Italy

Giovanni Franco

This inventor holds 6 USPTO granted patents and 4 published patent applications and 2 EPO patents. Top assignee: Stmicroelectronics S.r.l.. Active years: 2001-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Giovanni Franco. Retrieved from https://idiyas.com/inventor/giovanni-franco

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 100.0


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Location History:

  • San Giovanni la Punta, IT (2001)
  • Viagrande, IT (2023)

Company Filing History:


Years Active: 2001-2026

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6 patents (USPTO):Explore Patents

Title: Giovanni Franco: Innovator in SiC Electronic Devices

Introduction

Giovanni Franco is a notable inventor based in San Giovanni la Punta, Italy. He has made significant contributions to the field of electronic devices, particularly those utilizing silicon carbide (SiC) technology. With a total of 6 patents to his name, Franco's work is recognized for its innovative approaches to manufacturing electronic devices.

Latest Patents

Franco's latest patents include a method for manufacturing a SiC electronic device with reduced handling steps. This method involves forming a structural layer of SiC on the front side of a substrate, which has a back side opposite to the front side. Active regions of the electronic device are created in the structural layer, allowing for the generation or conduction of electric current during operation. Additionally, a first electric terminal is formed on the structural layer, while an intermediate layer is created at the back side of the substrate. This intermediate layer is heated by a laser beam to facilitate the formation of an ohmic contact with titanium compounds. Another significant patent focuses on the formation of an ohmic contact in a SiC-based electronic device. This method includes implanting P-type dopant species on the front side of a solid body made of N-type SiC, followed by generating a laser beam directed towards the implanted region to create a carbon-rich electrical-contact region.

Career Highlights

Giovanni Franco is currently employed at STMicroelectronics S.r.l., where he continues to develop innovative technologies in the field of electronic devices. His work has contributed to advancements in the efficiency and performance of SiC-based devices, making them more viable for various applications.

Collaborations

Franco has collaborated with notable colleagues, including Mario Giuseppe Saggio and Simone Rascuna. These partnerships have fostered a collaborative environment that enhances the innovation process within the company.

Conclusion

Giovanni Franco's contributions to the field of SiC electronic devices highlight his role as a leading inventor in this technology. His innovative methods and collaborative efforts continue to push the boundaries of electronic device manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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