The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jul. 06, 2021
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Nicolo′ Piluso, Catania, IT;
Andrea Severino, Aci Sant'Antonio, IT;
Stefania Rinaldi Beatrice, San Pietro Clarenza, IT;
Angeloannibale Mazzeo, Catania, IT;
Leonardo Caudo, Bernareggio, IT;
Alfio Russo, Biancavilla, IT;
Giovanni Franco, Viagrande, IT;
Anna Bassi, Gravina di Catania, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A process for manufacturing a silicon carbide semiconductor device includes providing a silicon carbide wafer, having a substrate. An epitaxial growth for formation of an epitaxial layer, having a top surface, is carried out on the substrate. Following upon the step of carrying out an epitaxial growth, the process includes the step of removing a surface portion of the epitaxial layer starting from the top surface so as to remove surface damages present at the top surface as a result of propagation of dislocations from the substrate during the previous epitaxial growth and so as to define a resulting top surface substantially free of defects.