Stmicroelectronics S.r.l.

Giovanni Franco

Mario Giuseppe Saggio

Alfio Russo

Simone Rascuna'

Anna Bassi

Paolo Badala'

Simone Rascuná

Andrea Severino

Stefania Rinaldi

Angelo Annibale Mazzeo

Nicolò Piluso

A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

Method for manufacturing a SiC electronic device with reduced handling steps, and sic electronic device

A method for manufacturing a SiC-based electronic device, comprising the steps of: implanting, on a front side of a solid body made of SiC having a conductivity of an N type, dopant species of a P type thus forming an implanted region, which extends in the solid body starting from the front side and has a top surface coplanar with the front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region to temperatures comprised between 1500° C. and 2600° C. so as to form a carbon-rich electrical-contact region at the implanted region. The carbon-rich electrical-contact region forms an ohmic contact.

Ohmic contact formation in a SiC-based electronic device

Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic device

Process for the manufacturing of a DMOS-technology transistor, providing for forming, over a semiconductor material layer of a first conductivity type, an insulated gate electrode, introducing in said semiconductor material layer a first dopant of a second conductivity type for forming at least one body region of a second conductivity type extending under the insulated gate electrode, and introducing in said at least one body region a second dopant of the first conductivity type for forming, inside said body region, at least one source region of the first conductivity type, said body region and said source region defining, under the insulated gate electrode, a channel region for the DMOS transistor, wherein said first dopant is aluminum. After the introduction of said first dopant and said second dopant, a single thermal diffusion process for simultaneously diffusing the first dopant and the second dopant is provided.

Process for the manufacturing of a DMOS-technology transistor providing for a single thermal process for the formation of source and body regions

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San Giovanni la Punta, Italy

Giovanni Franco