The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Mar. 08, 2023
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Simone Rascuna', Catania, IT;

Fabrizio Roccaforte, Mascalucia, IT;

Gabriele Bellocchi, Catania, IT;

Marilena Vivona, Calatafimi Segesta, IT;

Assignee:

STMICROELECTRONICS S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/01 (2025.01); H10D 8/50 (2025.01); H10D 8/60 (2025.01); H10D 62/832 (2025.01); H10D 64/01 (2025.01); H10P 30/20 (2026.01); H10P 34/42 (2026.01); H10P 50/00 (2026.01); H10P 95/90 (2026.01);
U.S. Cl.
CPC ...
H10D 8/051 (2025.01); H10D 8/50 (2025.01); H10D 8/60 (2025.01); H10D 62/8325 (2025.01); H10D 64/01 (2025.01); H10P 30/2042 (2026.01); H10P 30/21 (2026.01); H10P 34/42 (2026.01); H10P 50/00 (2026.01); H10P 95/90 (2026.01);
Abstract

Method for manufacturing an electronic device, comprising the steps of: forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity; forming, on the front side, a 3C-SiC layer; and forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region. A silicon layer may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the silicon layer.


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