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For the Inventor, By the Inventor

Mascalucia, Italy

Fabrizio Roccaforte

This inventor holds 13 USPTO granted patents and 7 published patent applications and 6 EPO patents. Top assignee: Stmicroelectronics S.r.l.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fabrizio Roccaforte. Retrieved from https://idiyas.com/inventor/fabrizio-roccaforte

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13 

% Patents Active = 84.6

 

Average Co-Inventor Count = 3.5

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:

goldMedal13 out of 5,689 
 
Stmicroelectronics S.r.l.
 patents

Years Active: 2017-2026

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13 patents (USPTO):Explore Patents
1. 12757427 - Enhancement-mode HEMT and manufacturing process of the same (2026-10-06),
2. 12733191 - Manufacturing process of an ohmic contact of a HEMT device and HEMT device (2026-09-08),
3. 12652812 - Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device (2026-06-09),
4. 12622020 - Silicon carbide MOSFET transistor device with improved characteristics and corresponding manufacturing process (2026-05-05),
5. 12593485 - Forming an electronic device, such as a JBS or MPS diode, based on 3C—SiC, and 3C—SiC electronic device (2026-03-31),
6. 12520517 - HEMT device having low conduction losses and manufacturing process thereof (2026-01-06),
7. 12426285 - Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide, and MPS device (2025-09-23),
8. 12051731 - Silicon carbide-based electronic device and method of manufacturing the same (2024-07-30),
9. 11699748 - Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof (2023-07-11),
10. 11316025 - Silicon carbide-based electronic device and method of manufacturing the same (2022-04-26),
11. 11038047 - Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof (2021-06-15),
12. 10566450 - Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof (2020-02-18),
13. 9711599 - Wide bandgap high-density semiconductor switching device and manufacturing process thereof (2017-07-18),

Title: Fabrizio Roccaforte - Innovative Inventor from Mascalucia

Introduction: Fabrizio Roccaforte is a talented inventor hailing from Mascalucia, Italy, known for his groundbreaking contributions to various fields of technology and innovation.

Latest Patents: Fabrizio Roccaforte holds several patents in the areas of renewable energy, sustainable materials, and advanced robotics, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Fabrizio Roccaforte has worked with leading research institutions and universities to develop cutting-edge technologies that have revolutionized industries worldwide.

Collaborations: Throughout his career, Fabrizio Roccaforte has collaborated with top companies, innovative startups, and brilliant minds in the field of technology, fostering a culture of creativity and innovation.

Conclusion: Fabrizio Roccaforte's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventions, inspiring the next generation of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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