The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Feb. 10, 2023
Applicant:
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Inventors:
Ferdinando Iucolano, Gravina di Catania, IT;
Andrea Severino, Aci Sant'Antonio, IT;
Giuseppe Greco, Misterbianco, IT;
Fabrizio Roccaforte, Mascalucia, IT;
Assignee:
STMICROELECTRONICS S.r.l., Agrate Brianza, IT;
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 62/8325 (2025.01);
Abstract
A manufacturing process forms an HEMT device. For the manufacturing process includes forming, from a wafer of silicon carbide having a surface, an epitaxial layer of silicon carbide on the surface of the wafer A semiconductive heterostructure is formed on the epitaxial layer, and the wafer of silicon carbide is removed.