The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Jan. 19, 2023
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Ferdinando Iucolano, Gravina di Catania, IT;
Giuseppe Greco, Misterbianco, IT;
Paolo Badala', Acireale, IT;
Fabrizio Roccaforte, Mascalucia, IT;
Monia Spera, Catania, IT;
STMICROELECTRONICS S.r.l., Agrate Brianza, IT;
Abstract
A process for manufacturing a HEMT device includes forming a conductive region on a work body having a semiconductive heterostructure. To obtain the conductive region, a first reaction region having carbon is formed on the heterostructure and a metal stack is formed having a second reaction region in contact with the first reaction region. The work body is annealed, so that the first reaction region reacts with the second reaction region, thus forming an interface portion of the conductive region. The interface portion is of a compound having carbon and is in ohmic contact with the semiconductive hetero structure.