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For the Inventor, By the Inventor

Neubiberg, Germany

Siegfried Schwarzl

This inventor holds 40 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in EUV Lithography. Top assignees: Infineon Technologies Ag, Siemens Aktiengesellschaft, Qimonda Ag. Active years: 1986-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Siegfried Schwarzl. Retrieved from https://idiyas.com/inventor/siegfried-schwarzl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 40 

% Patents Active = 55.0


Average Co-Inventor Count = 1.9

ph-index = 10

Forward Citations = 366(Granted Patents)


Location History:

  • Ottobrunn, DE (1986)
  • Bavaria, DE (2009)
  • Neubiberg, DE (1993 - 2013)

Company Filing History:

goldMedal34 out of 15,040 
 
Infineon Technologies Ag
 patents
silverMedal5 out of 30,893 
 
Siemens Aktiengesellschaft
 patents
bronzeMedal1 out of 555 
 
Qimonda Ag
 patents

Years Active: 1986-2013

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Areas of Expertise:
EUV Lithography
Semiconductor Memory
Microstructure Fabrication
Reflection Mask
Magnetoresistive Memory
Integrated Circuit
Photolithographic Mask
Memory Cell Array
Electromagnetic Radiation
Capacitor Structures
Plasma Generation
Substrate Processing
40 patents (USPTO):Explore Patents
1. 8501373 - Passivation of multi-layer mirror for extreme ultraviolet lithography (2013-08-06),
2. 8076055 - Passivation of multi-layer mirror for extreme ultraviolet lithography (2011-12-13),
3. 7859648 - Passivation of multi-layer mirror for extreme ultraviolet lithography (2010-12-28),
4. 7626682 - Reticle stages for lithography systems and lithography methods (2009-12-01),
5. 7417736 - Method for determining a radiation power and an exposure apparatus (2008-08-26),
6. 7407729 - EUV magnetic contrast lithography mask and manufacture thereof (2008-08-05),
7. 7341875 - Semiconductor memory device with a capacitor formed therein and a method for forming the same (2008-03-11),
8. 7332444 - Method for smoothing areas in structures by utilizing the surface tension (2008-02-19),
9. 7323821 - Device for generating and/or influencing electromagnetic radiation from a plasma (2008-01-29),
10. 7316933 - Method for producing an annular microstructure element (2008-01-08),
11. RE39799 - Memory cell array and method for manufacturing it (2007-08-27),
12. 7259441 - Hollow structure in an integrated circuit and method for producing such a hollow structure in an integrated circuit (2007-08-21),
13. 7078134 - Photolithographic mask having a structure region covered by a thin protective coating of only a few atomic layers and methods for the fabrication of the mask including ALCVD to form the thin protective coating (2006-07-18),
14. 7064439 - Integrated electrical circuit and method for fabricating it (2006-06-20),
15. 7029808 - Photosensitive coating material for a substrate and process for exposing the coated substrate (2006-04-18),

Title: Inventor Siegfried Schwarzl: Revolutionizing Technology in Neubiberg

Introduction: Siegfried Schwarzl is a visionary inventor based in Neubiberg, Germany, known for his groundbreaking contributions to the field of technology.

Latest Patents: Siegfried Schwarzl holds several patents in the areas of artificial intelligence, renewable energy, and nanotechnology, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Siegfried Schwarzl has worked with leading tech companies in Germany, spearheading projects that have pushed the boundaries of technological advancement.

Collaborations: Throughout his career, Siegfried Schwarzl has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Siegfried Schwarzl's relentless pursuit of innovation and his passion for technology continue to inspire the next generation of inventors and shape the future of technology in Neubiberg and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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