The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2008
Filed:
Apr. 22, 2005
Alfred Kersch, Putzbrunn, DE;
Wolfgang Raberg, Fontainebleau, FR;
Siegfried Schwarzl, Neubiberg, DE;
Alfred Kersch, Putzbrunn, DE;
Wolfgang Raberg, Fontainebleau, FR;
Siegfried Schwarzl, Neubiberg, DE;
Infineon Technologies AG, Munich, DE;
Abstract
An annular microstructure element, in particular an annularly arranged monolayer or multilayer thin film, is formed over a substrate (S), e.g., for use in a magnetoresistive memory. To that end, a masking layer is applied over the substrate. An opening (C) is etched into the masking layer, so that a partial region of the surface is uncovered. The etching operation is performed in such a way that the opening (C) is formed with an overhang (B). The overhang at least partially shades the uncovered surface from an incident particle beam (TS). A particle beam (TS) is directed at the substrate (S) at an oblique angle (α) of incidence. In this case, the substrate (S) is rotated relative to the directed particle beam (TS). From the particle beam, material is thereby deposited annularly on the uncovered surface for the purpose of forming a hole-like microstructure element (R).