The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
May. 21, 2002
Joachim Nuetzel, Dresden, DE;
Till Schloesser, Dresden, DE;
Siegfried Schwarzl, Neubiberg, DE;
Stefan Wurn, Austin, TX (US);
Joachim Nuetzel, Dresden, DE;
Till Schloesser, Dresden, DE;
Siegfried Schwarzl, Neubiberg, DE;
Stefan Wurn, Austin, TX (US);
Infineon Technologies AG, Munich, DE;
Abstract
To integrate a capacitor device () into the region of a semiconductor memory device with a particularly small number of process steps, a lower electrode device () and an upper electrode device () of the capacitor device () are provided to be formed directly underneath or directly above the material region () which has the memory elements (), in such a way that as a result at least a part of the material region () which has the memory elements () functions at least as part of the respective dielectric () between the electrodes devices ().