Nirasaki, Japan

Shuuichi Ishizuka

USPTO Granted Patents = 6 

Average Co-Inventor Count = 4.6

ph-index = 2

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2010-2013

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6 patents (USPTO):Explore Patents

Title: Shuuichi Ishizuka: Innovator in Substrate Processing Technology

Introduction

Shuuichi Ishizuka is a prominent inventor based in Nirasaki, Japan. He has made significant contributions to the field of substrate processing technology, holding a total of 6 patents. His innovative approaches have advanced the efficiency and effectiveness of substrate processing apparatuses.

Latest Patents

Ishizuka's latest patents include a process chamber cleaning method in substrate processing apparatus, which involves alternately generating plasma of gases containing oxygen and nitrogen within the process chamber. This method enhances the cleaning process of the chamber, ensuring optimal performance. Another notable patent is related to a plasma process device and method, where the design of the electrode plate and shield ring is optimized to form a substantially flat surface, improving the overall functionality of the apparatus.

Career Highlights

Throughout his career, Shuuichi Ishizuka has worked with leading companies in the semiconductor industry, including Tokyo Electron Limited. His expertise in substrate processing has positioned him as a key figure in the development of advanced technologies in this field.

Collaborations

Ishizuka has collaborated with notable professionals such as Tetsuro Takahashi and Tatsuo Nishita. These partnerships have contributed to the innovation and refinement of substrate processing techniques.

Conclusion

Shuuichi Ishizuka's contributions to substrate processing technology through his patents and collaborations highlight his role as a significant inventor in the industry. His work continues to influence advancements in semiconductor manufacturing processes.

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