Tokyo Electron Limited

Toyko Electron Limited

Shuuichi Ishizuka

Tetsuro Takahashi

Yoshihiro Sato

Toshio Nakanishi

Masaru Sasaki

Yutaka Fujino

Tatsuo Nishita

Koji Maekawa

Hidenori Miyoshi

Kohei Kawamura

Hiroyuki Takahashi

Takashi Akahori

Yasuhiro Oshima

Koichi Takatsuki

Gishi Chung

Hikaru Yoshitaka

Shigeo Ashigaki

Jiro Katsuki

Yoichi Inoue

Syoichi Abe

In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.

Process chamber cleaning method in substrate processing apparatus, substrate processing apparatus, and substrate processing method

That surface of an electrode platewhich is opposite to a susceptorhas a projection shape. The electrode plateis fitted in an openingof shield ringat a projection. At this time, the thickness of the projectionis approximately the same as the thickness of the shield ringAccordingly, the electrode plateand the shield ringform substantially the same plane. The major surface of the projectionhas a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plateis formed of, for example, SiC.

Plasma process device and plasma process method

In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.

Method of forming gate insulation film, semiconductor device, and computer recording medium

The total film thickness TN of silicon oxynitride film and silicon oxide film remaining as its underlying layer is measured. A measurement target substrate is re-oxidized, and, after the re-oxidization, the total film thickness (TN) of the silicon oxynitride film, silicon oxide film and silicon oxide film resulting from the re-oxidization on the target substrate is measured. Separately, a reference substrate provided with silicon oxide film is re-oxidized, and, after the re-oxidization, the total film thickness Tof the silicon oxide film and silicon oxide film resulting from the re-oxidization on the reference substrate is measured. Re-oxidization rate reduction ratio RORR of the measurement target substrate is calculated by the following formula (1) from the values of total film thicknesses TN, TN and T. The nitrogen concentration of the silicon oxynitride film of the target substrate is determined from the calculated re-oxidization rate reduction ratio RORR. RORR (%)={(TTN)/(TTN)}&#xd7;100 (1).

Method of measuring nitrogen concentration, method of forming silicon oxynitride film, and method of manufacturing semiconductor device.

Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate

Method of forming gate insulating film, semiconductor device and computer recording medium

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Nirasaki, Japan

Shuuichi Ishizuka