The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Jan. 27, 2010
Tatsuo Nishita, Amagasaki, JP;
Shuuichi Ishizuka, Nirasaki, JP;
Yutaka Fujino, Nirasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Yoshihiro Sato, Amagasaki, JP;
Tatsuo Nishita, Amagasaki, JP;
Shuuichi Ishizuka, Nirasaki, JP;
Yutaka Fujino, Nirasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Yoshihiro Sato, Amagasaki, JP;
Toyko Electron Limited, Tokyo, JP;
Abstract
In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.