Shuang-Neng Peng

Title: Shuang-Neng Peng: Innovator in Semiconductor Technology

Introduction

Shuang-Neng Peng is a prominent inventor based in Sinjhuang, Taiwan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative approaches to forming structures and contact materials.

Latest Patents

His latest patents include methods and apparatuses for forming structures. One notable patent describes a method of forming a contact structure, which involves creating a dielectric layer on a substrate. A metal contact with metal oxide is formed within this dielectric layer. The solubility of the metal oxide is enhanced by using a hydroxide solution at temperatures above approximately 10°C or a chemical at temperatures exceeding about 15°C. Another patent focuses on the method of forming an insulator between features of a semiconductor device. This method involves depositing an insulating material, such as high-density plasma (HDP) oxide, over and between features on a semiconductor device. The height of the insulating material is designed to be less than that of the features, and a sputter process is employed to reduce the height of the insulating material.

Career Highlights

Shuang-Neng Peng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing the technology used in semiconductor devices.

Collaborations

He has collaborated with notable coworkers, including Chi-Ming Huang and Chun-Hung Chen, contributing to various projects that enhance semiconductor manufacturing processes.

Conclusion

Shuang-Neng Peng's innovative work in semiconductor technology and his contributions through his patents highlight his role as a key inventor in the field. His advancements continue to influence the development of semiconductor devices.