The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Aug. 25, 2004
Shuang-neng Peng, Sinjhuang, TW;
Chun-hung Chen, Yongjing Township, Changhua County, TW;
Soon Kang Huang, Hsinchu, TW;
Weng-liang Fang, Hsinchu, TW;
Shuang-Neng Peng, Sinjhuang, TW;
Chun-Hung Chen, Yongjing Township, Changhua County, TW;
Soon Kang Huang, Hsinchu, TW;
Weng-Liang Fang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-chu, TW;
Abstract
Methods of forming a contact structure, contact structures and apparatuses applied thereto are disclosed. The method of forming a contact structure forms a dielectric layer on a substrate. A metal contact with metal oxide thereon is formed in the dielectric layer. The solubility of the metal oxide is enhanced by using HO with a temperature higher than about 10° C. or a chemical with a temperature higher than about 15° C.