The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Dec. 22, 2003
Shuang-neng Peng, Sinjhuang, TW;
Sheng-chen Wang, Taichung, TW;
Shuang-Neng Peng, Sinjhuang, TW;
Sheng-Chen Wang, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming an insulator between features of a semiconductor device. An insulating material such as high-density plasma (HDP) oxide is deposited over and between features formed on a semiconductor device. The height of the insulating material between the features is preferably less than the height of the features. A sputter process or other removal process is used to decrease the insulating material height of the features and decrease the insulating material height between the features. The insulating material is removed from over the top surface of the features, and a chemical-mechanical polish (CMP) process is used to lower the top surface of the features, stopping on the insulating material between the features.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile