Company Filing History:
Years Active: 2014-2015
Title: The Innovative Mind of Shili Zhang
Introduction
Shili Zhang, located in Uppsala, Sweden, is a prominent inventor with a remarkable portfolio of four patents. His work primarily focuses on advancements in semiconductor technology, showing a commitment to optimizing device performance.
Latest Patents
Among his latest patents is the "Asymmetrical gate MOS device and method of making." This invention presents an innovative asymmetrical gate MOS device featuring a metal gate with different work functions on the source and drain sides. The invention aims to optimize the overall performance parameters of the MOS device. The accompanying method includes the implantation of dopant ions into the gate, enhancing performance and making the process easily implementable. Additionally, Zhang has developed a "Body contact SOI transistor structure and method of making." This patent outlines a novel method for forming effective body contacts in SOI field-effect transistors, eliminating the floating-body effect and improving heat dissipation in associated integrated circuits.
Career Highlights
Shili Zhang is affiliated with Fudan University, a respected institution known for its research and innovation in various fields. His contributions to the field of semiconductor technology have garnered attention and recognition within the academic community.
Collaborations
Throughout his career, Zhang has collaborated with fellow inventors such as Dongping Wu and Yinghua Piao. These partnerships reflect a shared commitment to advancing technology and fostering innovation within the semiconductor landscape.
Conclusion
Shili Zhang’s inventive spirit and dedication to enhancing semiconductor devices stand as a testament to his invaluable impact in the world of technology. His patents not only showcase his ingenuity but also highlight the collaborative efforts that drive innovation in this rapidly evolving field.