The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Apr. 19, 2011
Dongping Wu, Shanghai, CN;
Shili Zhang, Uppsala, SE;
Dongping Wu, Shanghai, CN;
Shili Zhang, Uppsala, SE;
Fudan University, Shanghai, CN;
Abstract
The present invention puts forward a body-contact SOI transistor structure and method of making. The method comprises: forming a hard mask layer on the SOI; etching an opening exposing SOI bottom silicon; wet etching an SOI oxide layer through the opening; depositing a polysilicon layer at the opening followed by anisotropic dry etching; depositing an insulating dielectric layer at the opening followed by planarization; forming a gate stack structure by deposition and etching, and forming source/drain junctions of the transistor using ion implantation. By using the present invention, body contact for SOI field-effect transistors can be effectively formed, thereby eliminating floating-body effect in the SOI field-effect transistors, and improving heat dissipation capability of the SOI transistors and associated integrated circuits.