Company Filing History:
Years Active: 2015-2021
Title: Innovations of Shijin Ding: A Pioneer in Thin-Film Transistor Technology
Introduction
Shijin Ding, a prominent inventor based in Shanghai, China, has made significant contributions to the field of semiconductor technology. With a total of four patents to his name, Ding's innovations primarily focus on advancing memory technologies and film deposition methods used in integrated circuits. His work has shown immense promise in improving data retention and device performance stability.
Latest Patents
Ding's latest patents showcase his expertise in developing advanced materials and manufacturing processes. One of his notable inventions is the "Multi-level cell thin-film transistor memory and method of fabricating the same." This invention features a memory structure that consists of a gate electrode, a charge blocking layer, a charge trapping layer, a charge tunneling layer, and source and drain electrodes. The innovative design of the charge tunneling layer fully encloses the charge trapping layer, which isolates it from external influences and enhances the device's data retention property and performance stability. By utilizing a metal oxide semiconductor thin film as the charge trapping layer, his invention implements multi-level cell storage that significantly boosts storage density.
Another recent patent is the "Method and corresponding reactor for preparing metal nitrides with adjustable metal contents." This cutting-edge method allows for the deposition of metal-nitride thin films by employing a series of controlled half-reaction processes. By adjusting the reaction ratios, metal nitride thin films with varying metal contents can be synthesized, thereby achieving specific resistivity and film thickness. This innovative technique proves crucial for meeting the requirements of advanced CMOS integrated circuit technologies.
Career Highlights
Shijin Ding currently works at Fudan University, where he engages in research and development activities related to semiconductor technology. His expertise and contributions have garnered attention in academic and industrial circles. With four patents under his belt, Ding's work continues to impact the field of memory technology significantly.
Collaborations
Throughout his career, Ding has collaborated with fellow researchers and inventors. Notable among his coworkers are Wei Zhang and Pengfei Wang, who have contributed to various projects alongside Ding. Their collective efforts in exploring innovative approaches within semiconductor technology emphasize the importance of teamwork in advancing scientific knowledge.
Conclusion
In conclusion, Shijin Ding stands out as a key inventor in the domain of semiconductor technology. His four patents, including groundbreaking advancements in thin-film transistor memory and metal nitride deposition methods, reflect his commitment to innovation. Through his work at Fudan University and collaborations with esteemed colleagues, Ding continues to push the boundaries of research and development in the semiconductor field, promising exciting advancements for the future.