The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Dec. 24, 2010
Pengfei Wang, Shanghai, CN;
Qingqing Sun, Shanghai, CN;
Shijin Ding, Shanghai, CN;
Wei Zhang, Shanghai, CN;
Pengfei Wang, Shanghai, CN;
Qingqing Sun, Shanghai, CN;
Shijin Ding, Shanghai, CN;
Wei Zhang, Shanghai, CN;
Fudan University, Shanghai, CN;
Abstract
A semiconductor memory device with a buried drain is provided. The device comprises a semiconductor substrate (); one drain region () of a first doping type; two source regions () of a second doping type; and a stacked gate provided on the semiconductor substrate for capturing electrons. A memory array formed by a plurality of semiconductor memory devices and a manufacturing method thereof are also provided. The semiconductor memory device has the advantages of small cell area, simple manufacturing process and the like. The manufacturing cost of the memory device is reduced and the storing density of the memory device is increased.