Hsinchu, Taiwan

Sheng-Haung Huang

This inventor holds 6 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2018-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheng-Haung Huang. Retrieved from https://idiyas.com/inventor/sheng-haung-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 46(Granted Patents)


Company Filing History:


Years Active: 2018-2024

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6 patents (USPTO):Explore Patents

Title: Innovations of Sheng-Haung Huang

Introduction

Sheng-Haung Huang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. With a total of 6 patents to his name, Huang's work has had a considerable impact on the industry.

Latest Patents

Huang's latest patents include a semiconductor structure integrated with a magnetic tunneling junction. The first patent describes a semiconductor structure that consists of a substrate, a transistor region, a first and a second contact plug, a first metal via, a magnetic tunneling junction (MTJ) structure, and a metal interconnect. The transistor region features a gate over the substrate, along with a first and a second doped region. The design ensures that the first and second contact plugs have a coplanar upper surface. The first metal via and the MTJ structure are positioned over the respective contact plugs, with the first metal via leveled with the MTJ structure. The metal interconnect is situated above both the first metal via and the MTJ structure, incorporating at least two second metal vias that connect with both elements.

The second patent also focuses on a semiconductor structure integrated with a magnetic tunneling junction. This design includes a substrate, a transistor region, a metal interconnect, and an MTJ. The transistor region features a gate over the substrate, with a doped region partially embedded within it. The metal interconnect is positioned above the doped region and includes a metal via. Notably, the MTJ is entirely located beneath the metal interconnect, situated between the doped region and the metal via, with a diameter of the bottom surface of the MTJ being greater than that of its upper surface.

Career Highlights

Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing semiconductor technologies and enhancing their applications.

Collaborations

Huang has collaborated with notable colleagues, including Harry-Hak-Lay Chuang and Alexander Kalnitsky. Their combined expertise has contributed to the success of various projects within the semiconductor field.

Conclusion

Sheng-Haung Huang is a distinguished inventor whose contributions to semiconductor technology are noteworthy. His innovative patents and collaborations reflect his commitment to advancing the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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