The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Dec. 17, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Alexander Kalnitsky, San Francisco, CA (US);

Harry-Hak-Lay Chuang, Hsinchu County, TW;

Sheng-Haung Huang, Hsinchu, TW;

Tien-Wei Chiang, Taipei, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); G01R 33/09 (2006.01); G11B 5/39 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G01R 33/098 (2013.01); G11B 5/3909 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); G11C 2211/5615 (2013.01);
Abstract

The present disclosure provides a semiconductor structure including a substrate, a transistor region having a gate over the substrate, a first doped region, and a second doped region at least partially in the substrate, and a contact plug directly over the gate, a first metal interconnect composed of copper over the transistor region, and a magnetic tunneling junction (MTJ) directly over the contact plug and under the first metal interconnect.


Find Patent Forward Citations

Kalnitsky, Alexander. (2021). Semiconductor structure integrated with magnetic tunneling junction (U.S. Patent No. 11037982). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11037982

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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