The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Sep. 30, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Harry-Hak-Lay Chuang, Singapore, SG;
Sheng-Haung Huang, Hsinchu, TW;
Hung-Cho Wang, Taipei, TW;
Kuei-Hung Shen, Hsinchu, TW;
Shy-Jay Lin, Jhudong Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a magnetoresistive random access memory (MRAM) device in an insulating layer. The MRAM device includes a first electrode, a magnetic tunnel junction (MTJ) over the first electrode, a second electrode over the MTJ, and an insulating spacer surrounding sidewalls of the first electrode, the MTJ, and the second electrode. Top surfaces of the insulating spacer and the second electrode are exposed from the insulating layer. The semiconductor device structure also includes a conductive pad over the insulating layer and electrically connected to the second electrode. The MTJ is entirely covered by the conductive pad.