This inventor holds 13 USPTO granted patents. Top assignee: Macronix International Co., Ltd.. Active years: 2010-2017.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Taichung, TW (2010 - 2015)
- Elmsford, NY (US) (2012 - 2016)
- Zhubei, TW (2016 - 2017)
Company Filing History:
Years Active: 2010-2017
Title: Innovations of Sheng-Chih Lai
Introduction
Sheng-Chih Lai is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 13 patents. His work focuses on innovative methods and devices that enhance memory technology.
Latest Patents
One of his latest patents is a memory device and method for fabricating the same. This memory device comprises a first conductive stripe, a first memory layer, a first conductive pillar, a first dielectric layer, and a first conductive plug. The first conductive strip extends along a first direction, while the first memory layer extends along a second direction adjacent to and overlapping with the first conductive stripe to define a first memory area. The first conductive pillar extends along the second direction and overlaps with the first memory area. The first dielectric layer extends along the second direction adjacent to the first conductive stripe, the first memory layer, and the first conductive pillar. The first conductive plug extends along the second direction and at least overlaps with a portion of the first conductive stripe, wherein it is electrically insulated from the first conductive stripe, the first memory layer, and the first conductive pillar by the first dielectric layer.
Another notable patent is the high aspect ratio etching method. In this method, a plurality of semiconductor layers is etched to define a first plurality of stacks of active strips between a first plurality of trenches. A first memory layer is formed on the side surfaces of active strips in the first plurality of trenches, and a first layer of conductive material is formed over the first memory layer. The first plurality of stacks is then etched to define a second plurality of stacks of active strips between a second plurality of trenches of the semiconductor layers. A second memory layer is formed on the side surfaces of active strips in the second plurality of trenches, and a second layer of conductive material is formed over the second memory layer. Channel regions of memory cells in the memory device are formed in active strips of the semiconductor layers in the second plurality of stacks.
Career Highlights
Sheng-Chih Lai is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory devices.
Collaborations
He has collaborated with notable coworkers, including Hang-Ting Lue and Chien-Wei Liao, contributing to various
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
