IDiyas

For the Inventor, By the Inventor

Taichung, Taiwan

Sheng-Chih Lai

USPTO Granted Patents = 13

Average Co-Inventor Count = 2.3

ph-index = 3

Forward Citations = 68(Granted Patents)


Location History:

  • Taichung, TW (2010 - 2015)
  • Elmsford, NY (US) (2012 - 2016)
  • Zhubei, TW (2016 - 2017)

Company Filing History:

goldMedal13 out of 3,595 
 
Macronix International Co., Ltd.
 patents

Years Active: 2010-2017

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13 patents (USPTO):
1. 9583350 - Memory device and method for fabricating the same (2017-02-28),
2. 9419010 - High aspect ratio etching method (2016-08-16),
3. 9356040 - Junction formation for vertical gate 3D NAND memory (2016-05-31),
4. 8987700 - Thermally confined electrode for programmable resistance memory (2015-03-24),
5. 8975687 - Nonvolatile memory array with continuous charge storage dielectric stack (2015-03-10),
6. 8946671 - Mask read only memory containing diodes and method of manufacturing the same (2015-02-03),
7. 8378410 - Semiconductor device and method of manufacturing the same (2013-02-19),
8. 8343840 - Blocking dielectric engineered charge trapping memory cell with high speed erase (2013-01-01),
9. 8330210 - High-κ capped blocking dielectric bandgap engineered SONOS and MONOS (2012-12-11),
10. 8207571 - Non-volatile memory device with a threshold voltage change rate controlled by gate oxide phase (2012-06-26),
11. 8119481 - High-κ capped blocking dielectric bandgap engineered SONOS and MONOS (2012-02-21),
12. 7910981 - Semiconductor device and method of manufacturing the same (2011-03-22),
13. 7816727 - High-κ capped blocking dielectric bandgap engineered SONOS and MONOS (2010-10-19),
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