The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Dec. 02, 2011
Sheng-chih Lai, Elmsford, NY (US);
Hsiang-lan Lung, Ardsley, NY (US);
Matthew J. Breitwisch, Pound Ridge, NY (US);
Sheng-Chih Lai, Elmsford, NY (US);
Hsiang-Lan Lung, Ardsley, NY (US);
Matthew J. Breitwisch, Pound Ridge, NY (US);
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A memory device includes a plurality of side-wall electrodes formed on a first side-wall of a trench within an insulating layer over a first plurality of contacts in an array of contacts in a substrate. The plurality of side-wall electrodes contact respective top surfaces of the first plurality of contacts. The side-wall electrodes respectively comprise a layer of tantalum nitride, having a composition TaN, where y is greater than x, and a layer of electrode material having a lower electrical resistivity and a lower thermal resistivity than the layer of tantalum nitride. Top surfaces of the plurality of side-wall electrodes contact memory material. A second plurality of side-wall electrodes may be formed on a second side-wall of the trench over a second plurality of contacts in the array of contacts.