The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2013

Filed:

Apr. 19, 2010
Applicants:

Sheng-chih Lai, Taichung, TW;

Hang-ting Lue, Hsinchu, TW;

Chien-wei Liao, Taoyuan, TW;

Inventors:

Sheng-Chih Lai, Taichung, TW;

Hang-Ting Lue, Hsinchu, TW;

Chien-Wei Liao, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A band gap engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking layer of metal doped silicon oxide material having a medium dielectric constant, such as aluminum doped silicon oxide, and separated from the semiconductor body including the channel by an engineered tunneling dielectric.


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