Chien-Wei Liao

Title: Innovations of Chien-Wei Liao

Introduction

Chien-Wei Liao is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of memory cell technology, holding a total of four patents. His work focuses on advanced charge trapping memory cells that enhance data storage capabilities.

Latest Patents

Liao's latest patents include a "Blocking dielectric engineered charge trapping memory cell with high speed erase." This invention features a charge trapping element separated from a gate by a blocking layer of metal-doped silicon oxide material. The design incorporates a medium dielectric constant, such as aluminum-doped silicon oxide, and an engineered tunneling dielectric that separates the charge trapping element from the semiconductor body. Another notable patent is the "High-κ capped blocking dielectric bandgap engineered SONOS and MONOS." This patent describes a charge trapping memory cell with a blocking dielectric that includes a buffer layer in contact with the charge trapping element. The capping layer has a higher dielectric constant than the first layer, enhancing the performance of high-speed erase operations through hole tunneling.

Career Highlights

Chien-Wei Liao is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory cells, making them faster and more efficient.

Collaborations

Liao has collaborated with notable coworkers such as Sheng-Chih Lai and Hang-Ting Lue. Their combined expertise has contributed to the development of cutting-edge memory technologies.

Conclusion

Chien-Wei Liao's contributions to memory cell technology are noteworthy, with several patents that push the boundaries of data storage. His innovative work at Macronix International Co., Ltd. continues to shape the future of memory technology.