This inventor holds 5 USPTO granted patents. Top assignee: Macronix International Co., Ltd.. Active years: 2007-2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Taipei, KR (2008)
- Taipei, TW (2007 - 2011)
Company Filing History:
Years Active: 2007-2011
Title: Shaw Hung Ku: Innovator in Charge Trapping Memory Technology
Introduction
Shaw Hung Ku is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of memory technology, particularly in charge trapping memory systems. With a total of 5 patents to his name, his work has advanced the understanding and functionality of memory devices.
Latest Patents
One of his latest patents is a design tool for charge trapping memory using simulated programming operations. This innovative method simulates the operation of a charge trapping memory cell by computing the amount of charge trapped. It determines the first tunneling current through the tunneling layer, the second tunneling current out of the charge trapping layer to the gate, and the third tunneling current escaping from traps in the charge trapping layer. The integration of these tunneling currents over a time interval allows for the computation of a change in threshold voltage for a transistor that includes the charge trapping structure. The parameter set utilized in this method includes only physical parameters, such as layer thickness, band offsets, and dielectric constants.
Another notable patent involves flash memory that features insulating liners between source/drain lines and channels. This memory array consists of a semiconductor body with multiple trenches aligned generally in parallel. The trenches contain semiconductor material, such as doped amorphous silicon, which serves as source/drain lines for the memory array. Insulating liners are positioned between the semiconductor material within the trenches and the semiconductor body. A series of word lines overlie the trenches and channel regions, creating an array of cross points. Charge trapping structures are situated between the word lines and channel regions, enabling the storage of data in flash memory cells.
Career Highlights
Shaw Hung Ku has established a successful career at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His work has not only contributed to the advancement of memory devices but has also positioned him as a key figure in the industry.
Collaborations
Throughout his career, Shaw has collaborated with notable colleagues, including Wenpin Lu and Chia Wei Wu. These collaborations have further enhanced his research and development efforts in memory technology.
Conclusion
Shaw Hung Ku's contributions to charge trapping memory technology have made a significant impact on the field. His innovative patents and career at Macronix International Co., Ltd. highlight his dedication to advancing
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
