The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Jul. 30, 2008
Shaw Hung Ku, Taipei, TW;
Chia Wei Wu, Jhubei, TW;
Ming Shang Chen, Hsinchu, TW;
Wenpin LU, Hsinchu, TW;
Shaw Hung Ku, Taipei, TW;
Chia Wei Wu, Jhubei, TW;
Ming Shang Chen, Hsinchu, TW;
Wenpin Lu, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method for simulating operation of a charge trapping memory cell which computes the amount of charge trapped by determining first tunneling current through the tunneling layer, determining second tunneling current out of the charge trapping layer to the gate, determining third tunneling current escaping from traps in the charge trapping layer and tunneling out to the gate, and integrating said tunneling currents over a time interval. A change in threshold voltage can be computed for a transistor including the charge trapping structure. The parameter set can include only physical parameters, including layer thickness, band offsets and dielectric constants.