Suzhou, China

Shaoyang Tan

USPTO Granted Patents = 3 

 

Average Co-Inventor Count = 6.4

ph-index = 1


Company Filing History:


Years Active: 2023-2025

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3 patents (USPTO):Explore Patents

Title: Shaoyang Tan: Innovator in Semiconductor Technology

Introduction

Shaoyang Tan is a prominent inventor based in Suzhou, China. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing light-emitting efficiency through innovative semiconductor structures.

Latest Patents

Shaoyang Tan's latest patents include a semiconductor structure and a method for manufacturing the same. This semiconductor structure features a semiconductor substrate layer, an N-type waveguide structure, and an active layer designed to improve light-emitting efficiency. The N-type waveguide structure consists of two stacked layers, optimizing the conduction and valence band levels for enhanced performance.

Another notable patent is the multi-active area semiconductor structure and its manufacturing method. This invention includes a common confining layer and a quantum well layer, which work together to improve light-emission efficiency while reducing optical field crosstalk. These advancements represent significant strides in semiconductor technology.

Career Highlights

Throughout his career, Shaoyang Tan has worked with reputable companies such as Suzhou Everbright Photonics Co., Ltd. and Everbright Institute of Semiconductor Photonics Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Shaoyang Tan has collaborated with notable colleagues, including Jun Wang and Quanling Li. These partnerships have contributed to the successful development of his patents and advancements in the field.

Conclusion

Shaoyang Tan is a distinguished inventor whose work in semiconductor technology has led to significant innovations. His patents reflect a commitment to improving light-emitting efficiency and advancing the capabilities of semiconductor structures.

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