High-power semiconductor light-emitting chip with longitudinal carrier modulation and manufacturing method therefor

Abstract

The present application provides a high-power semiconductor light-emitting chip with longitudinal carrier modulation and a manufacturing method therefor. The high-power semiconductor light-emitting chip with longitudinal carrier modulation includes: an active layer; a first semiconductor cell layer disposed on the active layer, wherein the first semiconductor cell layer includes a contact doped layer, the first semiconductor cell layer includes a plurality of current blocking regions that are disposed at least in the contact doped layer and distributed in a slow-axis direction, and the parts of the first semiconductor cell layer between neighboring current blocking regions act as current injection regions, wherein a current density function J(z) of current density in the active layer satisfies: wherein and an average resistivity r(z) of corresponding current injection regions and current blocking regions at any position in the cavity-length direction satisfies where ris a coefficient of r(z).