The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Jul. 20, 2022
Suzhou Everbright Photonics Co., Ltd., Jiangsu, CN;
Everbright Institute of Semiconductor Photonics Co., Ltd., Jiangsu, CN;
Jun Wang, Suzhou, CN;
Yudan Gou, Suzhou, CN;
Li Zhou, Suzhou, CN;
Yang Cheng, Suzhou, CN;
Shaoyang Tan, Suzhou, CN;
Lichen Zhang, Suzhou, CN;
Bo Li, Suzhou, CN;
Yiwen Hu, Suzhou, CN;
Dayong Min, Suzhou, CN;
Abstract
A multi-active area semiconductor structure and a method for manufacturing same. The multi-active area semiconductor structure includes: a (2k−1)common confining layer arranged between a kactive layer and a ktunnel junction and in contact with the ktunnel junction; and a 2kcommon confining layer arranged between the kactive layer and a (k+1)tunnel junction and in contact with the ktunnel junction, where a forbidden band width of a kquantum well layer is less than both a forbidden band width of a kfirst-semiconductor layer and a forbidden band width of a ksecond-semiconductor layer; a total thickness of the (2k−1)common confining layer and the 2kcommon confining layer is greater than a critical optical field coupling thickness and less than or equal to twice the critical optical field coupling thickness; and a thickness of the kquantum well layer is less than or equal to 1/10 of a thickness of the (2k−1)common confining layer, and the thickness of the kquantum well layer is less than or equal to 1/10 of a thickness of the 2kcommon confining layer. The multi-active area semiconductor structure has effectively improved light-emission efficiency and reduced optical field crosstalk.