Everbright Institute of Semiconductor Photonics Co., Ltd.

Suzhou Everbright Photonics Co., Ltd.

Shaoyang Tan

Jun Wang

Quanling Li

Li Zhou

Bo Li

Dayong Min

Xinsheng Liao

Heng Liu

Yintao Guo

Bangguo Wang

Yao Xiao

Lichen Zhang

Yang Cheng

Yiwen Hu

Yudan Gou

Wu Zhao

A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a semiconductor substrate layer; an N-type waveguide structure arranged on the semiconductor substrate layer; and an active layer arranged on a surface of the N-type waveguide structure on a side away from the semiconductor substrate layer. The N-type waveguide structure includes a first N-type waveguide layer and a second N-type waveguide layer that are stacked. The second N-type waveguide layer is arranged between the first N-type waveguide layer and the active layer. A conduction band level of the first N-type waveguide layer is the same as a conduction band level of the second N-type waveguide layer. A valence band level of the first N-type waveguide layer is lower than a valence band level of the second N-type waveguide layer. The semiconductor structure increases light emitting efficiency.

Semiconductor structure and method for manufacturing same

A multi-active area semiconductor structure and a method for manufacturing same. The multi-active area semiconductor structure includes: a (2k−1)common confining layer arranged between a kactive layer and a ktunnel junction and in contact with the ktunnel junction; and a 2kcommon confining layer arranged between the kactive layer and a (k+1)tunnel junction and in contact with the ktunnel junction, where a forbidden band width of a kquantum well layer is less than both a forbidden band width of a kfirst-semiconductor layer and a forbidden band width of a ksecond-semiconductor layer; a total thickness of the (2k−1)common confining layer and the 2kcommon confining layer is greater than a critical optical field coupling thickness and less than or equal to twice the critical optical field coupling thickness; and a thickness of the kquantum well layer is less than or equal to 1/10 of a thickness of the (2k−1)common confining layer, and the thickness of the kquantum well layer is less than or equal to 1/10 of a thickness of the 2kcommon confining layer. The multi-active area semiconductor structure has effectively improved light-emission efficiency and reduced optical field crosstalk.

Multi-active area semiconductor structure and method for manufacturing same

The present application relates to the technical field of semiconductor optoelectronics, in particular to a multi-active-region cascaded semiconductor laser. The multi-active-region cascaded semiconductor laser comprises: a plurality of cascaded active regions, wherein each cascaded active region comprises a plurality of active regions; and a tunnel junction, arranged on at least one side of the cascaded active region and electrically connected with the cascaded active region; wherein in the cascaded active region, at least one group of adjacent active regions are connected through a barrier layer. In this way, more active regions are added in the periodic gain structure, which improves the internal quantum efficiency of the device and also reduces the carrier density, thereby obtaining more gains. The barrier layer connection does not have the property of introducing a new pn junction, so the layer will not increase the turn-on voltage for device operation, and meanwhile the epitaxial growth is much simpler than that of the tunnel junction.

Multi-active-region cascaded semiconductor laser

Growing community of inventors

Suzhou, China

Shaoyang Tan