Qiryat-Gat, Israel

Shai Haimson

This inventor holds 4 USPTO granted patents. Top assignee: Micron Technology Incorporated. Active years: 2013-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shai Haimson. Retrieved from https://idiyas.com/inventor/shai-haimson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Location History:

  • Moshav Beer Tuvia, IL (2013)
  • Moshav Beer Ruvia, IL (2014)
  • Qiryat-Gat, IL (2014 - 2015)

Company Filing History:


Years Active: 2013-2015

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4 patents (USPTO):Explore Patents

Title: Shai Haimson: Innovator in Semiconductor Technology

Introduction

Shai Haimson is a notable inventor based in Qiryat-Gat, Israel, recognized for his contributions to semiconductor technology. With a total of four patents to his name, Haimson has made significant advancements in the field, particularly in the design and fabrication of semiconductor structures.

Latest Patents

Haimson's latest patents include innovative solutions for enhancing semiconductor performance. One of his patents focuses on "Semiconductor structures having adhesion promoting layer in cavities." This invention addresses the challenge of filling high aspect ratio trenches with metal, reducing the tendency to form seams or close off the trench at the top during the filling process. By strategically placing material that encourages metal growth at the bottom of the trench, Haimson's design promotes upward growth from the base, optimizing the filling process.

Another significant patent is for a "Barrier layer for integrated circuit contacts." This invention allows for the formation of plug contacts with barrier layers that have thicknesses of less than 50 angstroms. In one embodiment, the barrier layer is created through the chemical vapor deposition of diborane, resulting in a boron layer that effectively separates metallic contacts from the surrounding dielectric and substrate. This boron layer can be composed of substantially pure boron and boron silicide, enhancing the reliability of integrated circuits.

Career Highlights

Shai Haimson is currently employed at Micron Technology Incorporated, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing technologies that improve the efficiency and performance of electronic devices.

Collaborations

Haimson collaborates with talented professionals in his field, including Dror Horvitz and Maor Rotlain, who contribute to the innovative environment at Micron Technology.

Conclusion

Shai Haimson's contributions to semiconductor technology through his patents demonstrate his commitment to innovation and excellence in the field. His work not only advances the technology but also sets a foundation for future developments in semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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